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IPS031IRN/a5avaiIntelligent Power Switch 1 Channel Low Side Driver in a TO-220AB Package


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IPS031
Intelligent Power Switch 1 Channel Low Side Driver in a TO-220AB Package
Data Sheet N0.PD 60150-J
Interhot onol
TOR Rectifier "330315)
FULLY PROTECTED POWER MOSFET SWITCH
Features Product Summary
. Over temperature shutdown
. Over current shutdown
. Active clamp Rds(on) 60mn (max)
. Low current & logic level input
. E.S.D protection V clamp 50V
. . lshutdown 12A
Description
The lPS031/lPS031S are fully protected three terminal Ton/Toe 1 .5rus
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET® Packages
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C
or when the drain current reaches 12A. The device
restarts once the input is cycled. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
3-Lead DZPak
IPSO31 S
. . IPSO31
Typical Connection
R in series D
(if needed)
—l: IN control
Logic signal
(Refer to lead assignment for correct pin configuration)
1
IPS031(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25°C unless otherwise specified). PCB mounting uses the standard foot-
print with 70 um copper thickness.
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
lin, max Maximum IN current -10 +10 mA
lsd cont. Diode max. continuous current (1)
rth=62°ClW IPSO31 - 2.8 T0220 free air
rth=5°ClW IPS031 - 18 A T0220 with Rth=5°ClW
rth=80°C/W PS031S - 2.2 SMD220 Std. footprint
lsd pulsed Diode max. pulsed current (1) - 18
Pd Maximum power dissipation“)
(rth=620C/W) IPS031 - 2 W
(rth=800C/W) IPS031S - 1.56
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=OQ, L=10pH
T stor. Max. storage temperature -55 150
T] max. Max. junction temperature -40 +150 oc
Tlead Lead temperature (soldering, 10 seconds) - 300
Thermal Characteristics
Symbol Parameter Min Typ. Max. Units Test Conditions
Rth 1 Thermal resistance free air - 60 - TO-220
Rth 2 Thermal resistance junction to case - 3 -
Rth 1 Thermal resistance with standard footprint - 80 - oc/W
Rth 2 Thermal resistance with I" square footprint - 60 - D2PAK (SMD220)
Rm 3 Thermal resistance junction to case - 3 -
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage - 35
VIH High level input voltage 4 6 V
VIL Low level input voltage 0 0.5
Ids Continuous drain current
Tamb=85°c (TAmbient = 85°C, IN = 5V, rth = 60°CNV, Tj = 125°C) IPS031 - 3.1 A
(TAmbient = 85°C, IN = 5V, rth = 80°C/W, Tj = 125°C) IPSO31S - 2.8
Rin Recommended resistor in series with IN pin 0.2 5 kn
Tr-in(max) Max recommended rise time for IN signal (see fig. 2) - 1 us
Fr-lsc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.

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