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IPS021-IPS021S
Intelligent Power Switch 1 Channel Low Side Driver in a TO-220AB Package
International
TOR, Rectifier
Data Sheet No.PD 60148-K
IPS021(S)
FULLY PROTECTED POWER MOSFET SWITCH
Product Summary
Features
. Over temperature shutdown
. Over current shutdown
. Active clamp
. Low current & logic level input
. E.S.D protection
Description
The lPS021/lPS021S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh envi-
ronments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165°C
or when the drain current reaches 5A. These devices
restart once the input is cycled. The avalanche capa-
bility is significantly enhanced by the active clamp
and covers most inductive load demagnetizations.
Rds(on) 150mn (max)
V clamp 50V
lshutdown 5A
Ton/Toff 1 .5us
Packages
3-Lead D2Pak
IPS021S
. . IPS021
TypicalConnection
R in series D
(if needed)
—: IN control "
Logic signal
(Refer to lead assignment for correct pin configuration)
IPS021(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25°C unless otherwise specired). PCB mounting uses the standard foot-
print with 70 pm copper thickness.
International
TOR Rectifier
Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47
Vin Maximum input voltage -0.3 7 V
lin, max Maximum IN current -10 +10 mA
lsd cont. Diode max. continous current (1)
(rth=620CIW) IP8021 - 2.8
(rth=10°C/W) IPM21 - 8 A
(rth=8(PCAN) PS021S - 2.2
lsd pulsed Diode max. pulsed current (1) - 10A
Pd Maximum power dissipation“)
(rth=620C/W) IPSO21 - 2 W
(rth=80°C/W) |P8021S - 1.56
ESD1 Electrostatic discharge voltage (Human Body) - 4 C=100pF, R=1500f2,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 kV C=200pF, R=0f2, L=10PH
T Mor. Max. storage temperature -55 150
T] max. Max. junction temperature. -40 150 °C
Tlead Lead temperature (soldering, 10 seconds) - 300
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
Rm 1 Thermal resistance free air - 60 - T O-220
Rm 2 Thermal resistance junction to case - 5 -
Rm 1 Thermal resistance with standard footprint - 80 - oc/W
Rth 2 Thermal resistance with 1" square footprint - 50 - D2PAK (SMD220)
Rm 3 Thermal resistance junction to case - 5 -
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter Min. Max. Units
Vds (max) Continuous drain to source voltage - 35
VIH High level input voltage 4 6 V
VIL Low level input voltage 0 0.5
Ids Continuous drain current - 1.8 A
Tamb=85°C (TAmbient = 85°C, IN = 5V, rth = 60°CNV, Tj = 125°C)
Rin Recommended resistor in series with IN pin 0.5 5 kn
Tr-in (max) Max recommended rise time for IN signal (see fig. 2) - 1 us
Fr-lsc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. Notes.
