| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPP16CN10N |
INFINEON|Infineon |
N/a |
140 |
 |
OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM) |
IPP16CN10N , OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)
IPP16CN10NG , OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)
IPP16CN10NG , OptiMOS®2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)
IPP200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPP200N25N3G , OptiMOSTM3 Power-Transistor
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.624A
International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IRLR014TR ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible In typical surface mount
IRLR014TRLPBF , Power MOSFET
