IPP10N03L ,OptiMOS Power MOSFET, 30V, TO-220, RDSon = 9.2mOhm, 73A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
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IRLR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO-252AA T0-251AA
Absolute Maximum Ratings
Parameter Max. Units
..
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International
TOR Rectifier IRLR014
HEXFETOD Power MOSFET IR LU O1 4
q Dynamic ..
IPB10N03L-IPP10N03L
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LL
IPP10N03L
IPB10N03L
OptiMOSâ Buck converter series
Product Summary
Feature· N-Channel
· Logic Level
· Low On-Resistance R
· Excellent Gate Charge x R
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated
· Ideal for fast switching buck converters
P- TO263 -3-2P- TO220 -3-1
IPP10N03L
IPB10N03L
Thermal Characteristics
Characteristics
Static CharacteristicsCurrent limited by bondwire ; with an RthJC = 1.4K/W the chip is able to carry ID= 88A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimosDefined by design. Not subject to production test.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
IPP10N03L
IPB10N03L
Electrical Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
IPP10N03L
IPB10N03L
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
90
100
120
IPP10N03L
tot
2 Drain currentD = f (TC)
parameter: VGS³ 10 V
10
20
30
40
50
60
80
IPP10N03L
4 Max. transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
IPP10N03L
thJC
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C10 10 10 10
IPP10N03L
IPP10N03L
IPB10N03L
5 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 80 µs
20
40
60
80
100
120
140
170
IPP10N03L
6 Typ. drain-source on resistanceDS(on) = f (ID)
parameter: VGS
0.004
0.008
0.012
0.016
0.02
0.024
0.032
IPP10N03L
DS(on)
7 Typ. transfer characteristics D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: tp = 80 µs
20
40
60
80
100
140
8 Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
20
30
40
50
60
80
IPP10N03L
IPB10N03L
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 36 A, VGS = 10 V
10
12
14
16
18
IPP10N03L
DS(on)
10 Typ. gate threshold voltageGS(th) = f (Tj)
parameter: VGS = VDS
0.5
1.5
GS(th)
11 Typ. capacitancesC = f (VDS)
parameter: VGS=0V, f=1 MHz10 10 10
12 Forward character. of reverse diodeF = f (VSD)
parameter: T10 10 10 10
IPP10N03L
