| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPP04CN10NG |
infineon |Infineon |
N/a |
3374 |
 |
OptiMOS™2 Power-Transistor |
| IPP04CN10NG |
INF |
N/a |
49 |
|
OptiMOS™2 Power-Transistor |
IPP04CN10NG , OptiMOS™2 Power-Transistor
IPP04N03LB , OptiMOS®2 Power-Transistor
IPP052NE7N3G , OptiMOS3 Power-Transistor
IPP054NE8N , OptiMOS®2 Power-Transistor
IPP054NE8NG , OptiMOS™2 Power-Transistor Features N-channel, normal level 175 °C operating temperature
IRLML6401 ,-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
IRLML6401 TR ,-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
IRLML6401 TR ,-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 packageapplications where printed circuit board space is at apremium. The low profile (<1.1mm) of the Mic ..
