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IPF04N03LAINFINEONN/a15000avaiLow Voltage MOSFETs


IPF04N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR 4.1mΩDS(on),max• N-channelI 50 AD• Log ..
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IPF04N03LA
Low Voltage MOSFETs
CP""''"
Infineon
lechnologies
IPF04N03LA
optiMosh Power-Transistor
Product Summary
Features VDS 25 V
. Ideal for high-frequency dc/dc converters RDSWmax 4.1 m n
. N-channel l 50 A
. Logic level
. Excellent gate charge x RDSM product (FOM)
. Very low on-resistance R won)
. Superior thermal resistance P-TO252-3-23
. 175 "C operating temperature
. dv/dt rated
Type Package Ordering Code Marking pin 1
IPF04N03LA P-T0252-3-23 Q67042-S4197 04N03LA gnugce
Maximum ratings, at Tj=25 "C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current h, TC=25 oCl) 50 A
Tc=100 ''C 50
Pulsed drain current ID,pulse TC=25 °C2) 350
Avalanche energy, single pulse E AS I 0:40 A, Rcs=25 n 890 mJ
10:50 A, VDS=20 v,
Reverse diode dv/dt dv/dt dildt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage” VGS :20 V
Power dissipation Ptot TC=25 ''C 115
Operating and storage temperature Ts, Tstg -55 ... 175 ''C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.3 page 1 2003-12-19
CP""''"
Infineon
lechnologies
IPF04N03LA
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case Rm - - 1.3 K/W
SMD version, device on PCB RNA minimal footprint - - 75
6 cm2 cooling area'') - - 50
Electrical characteristics, at Tj=25 "C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage Vsath) VDS=V03, ID=80 HA 1.2 1.6 2
V =25 V, V =0 V,
Zero gate voltage drain current loss Is, 0 GS - 0.1 1 HA
Tr=25 C
VDS=25 V, VGS=0 V,
Tr=125 "C - 10 100
Gate-source leakage current less Vss--20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance RDSM VGS=4.5 V, ID=30 A - 4.9 6 m9
VGS=10 V, lo=30 A - 3.5 4.1
Gate resistance Rs - 1.3 - f2
V >2 I R ,
Transconductance gfs I PSI I DI DS(on)max 36 72 - S
lD--30 A
1) Current is limited by bondwire; with an RthJC=1.3 KNVthe chip is able to carry 131 A.
2) See figure 3
3) lemax=150 ''C and duty cycle D 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.3 page 2 2003-12-19
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