| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD78CN10NG |
INFINEON|Infineon |
N/a |
5750 |
 |
OptiMOS®2 Power-Transistor |
| IPD78CN10NG |
英飞凌|Infineon |
N/a |
4550 |
|
OptiMOS®2 Power-Transistor |
IPD800N06N G INFINEON, OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification
IPD80N04S3-06 Infineon, OptiMOS-T Power-Transistor
IPD78CN10NG , OptiMOS®2 Power-Transistor
IPD90N04S3-04 , OptiMOS-T Power-Transistor
IPD90R1K2C3 , CoolMOS Power Transistor
IPDH5N03LAG , OptiMOS®2 Power-Transistor
IPDH6N03LA , OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
IRLL2703 ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL2703PBF , HEXFET Power MOSFET
IRLL2703TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
