| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD30N10S3L-34 |
infineon|Infineon |
N/a |
5000 |
 |
OptiMOS-T Power-Transistor |
| IPD30N10S3L-34 |
英飞凌|Infineon |
N/a |
5000 |
|
OptiMOS-T Power-Transistor |
IPD30P06P infineon
IPD350N06L Infineon
IPD350N06L G INFINEON, OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification
IPD350N06LG INF, OptiMOS® Power-Transistor Features For fast switching converters and sync. rectification
IPD35CN10N IR
IPD400N06N G INFINEON, OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated
IPD400N06NG INF, OptiMOS® Power-Transistor Features N-channel enhancement - normal level Avalanche rated
IPD4N06C3 INFINEON
IPD50N03S2-07 infineon, OptiMOS Power-Transistor
IPD50N03S2L-06 infineon, OptiMOS Power-Transistor
IPD50N03S4L-06 INFINEON, OptiMOS-T2 Power-Transistor
IPD30N10S3L-34 , OptiMOS-T Power-Transistor
IPD530N15N3G , OptiMOS3 Power-Transistor
IPD60R1K4C6 , 600V CoolMOS C6 Power Transistor
IPD60R385CP , CoolMOS Power Transistor
IPD78CN10NG , OptiMOS®2 Power-Transistor
IRLL024NTR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 91895IRLL024N®HEXFET Power MOSFETl Surface MountDl Advanced Process TechnologyV = 55VDSSl Ultr ..
IRLL024NTR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 91895IRLL024N®HEXFET Power MOSFETl Surface MountDl Advanced Process TechnologyV = 55VDSSl Ultr ..
IRLL024NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
