| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD30N06S2-15 |
|
N/a |
2500 |
 |
OptiMOS Power-Transistor |
| IPD30N06S2-15 |
infineon|Infineon |
N/a |
5000 |
|
OptiMOS Power-Transistor |
| IPD30N06S2-15 |
英飞凌原装|Infineon |
N/a |
2500 |
|
OptiMOS Power-Transistor |
IPD30N06S2-23 INFINEON, OptiMOS Power-Transistor
IPD30N06S2L-13 INFINEON, OptiMOS Power-Transistor
IPD30N08S2-22 INFINEON, OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IPD30N10S3L-34 , OptiMOS-T Power-Transistor
IPD30N10S3L-34 , OptiMOS-T Power-Transistor
IPD530N15N3G , OptiMOS3 Power-Transistor
IPD60R1K4C6 , 600V CoolMOS C6 Power Transistor
IRLL024N ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications.The SOT-223 package is designed for surface-mountusing vapor phase, infra red, or wave ..
IRLL024NQ ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packageapplications. Power dissipation of 1.0W is possible in a typical surface mountapplication. Availa ..
IRLL024NTR ,55V Single N-Channel HEXFET Power MOSFET in a SOT-223 packagePD - 91895IRLL024N®HEXFET Power MOSFETl Surface MountDl Advanced Process TechnologyV = 55VDSSl Ultr ..
