| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD200N15N3G |
X |
N/a |
2500 |
 |
OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |
IPD20N03 英飞凌
IPD20N03 INFINEON
IPD20N03BL Infineon
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD20N03L ,Low Voltage MOSFETsFeatureV30 VDS• N-ChannelR 20 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IPD30N03S2L-07 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IRLIZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
TOR Rectifier
PRELIMINARY
PD -9.1344A
IRLIZ24N
Logic-Level Gate Drive
..
IRLIZ24N. ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.
The moulding compound used provides a high isolation
capability and a low thermal r ..
IRLIZ34G ,60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
