| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD160N04L |
INF |
N/a |
994 |
 |
|
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPD20N03L ,Low Voltage MOSFETsFeatureV30 VDS• N-ChannelR 20 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3-1 ..
IPD30N03S2L-07 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IPD30N06S2-15 , OptiMOS Power-Transistor
IRLIB9343 ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIB9343PBF ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 Full-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRLIZ14G ,Single N-Channel HEXFET Power MOSFETapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
