| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD135N03L G |
INFINEON|Infineon |
N/a |
10010 |
 |
OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters |
IPD135N03L G , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD135N03LG , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD13N03LA ,Low Voltage MOSFETscharacteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =20 ..
IPD14N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 13.5mOhm, 30A, LLFeatureV 30 VDS• N-ChannelR 13.5 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3 ..
IPD200N15N3G , OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IRLI520 ,Power MOSFETapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI520G ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRLI520N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD - 9.1496AIRLI520NPRELIMINARY®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Tech ..
