IPD12CN10NG Fast Delivery, OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS

Home › I > I20 > IPD12CN10NG,mfg:英飞凌, OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
IPD12CN10NG	英飞凌\|Infineon	N/a	1909		OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IPD12CN10NG	infineon\|Infineon	N/a	2346		OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS

IPD12N03 infineon
IPD12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IPD12N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 10.4 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3- ..
IPD12N03LBG , OptiMOS®2 Power-Transistor
IPD135N03L G , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IPD135N03LG , OptiMOS 3 Power-Transistor Features Optimized technology for DC/DC converters
IRLI3705N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRLI3803 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationTO-220 FULLPAKcapability and a low ..
IRLI3803PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a high isolation capability and a low thermal r ..