| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD10N03LAG |
infineon|Infineon |
N/a |
52500 |
 |
OptiMOS®2 Power-Transistor |
IPD11N03LBG INFINEON
IPD12CN10LG 英飞凌
IPD10N03LAG , OptiMOS®2 Power-Transistor
IPD12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IPD12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IPD12N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 10.4 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO251 -3- ..
IPD12N03LBG , OptiMOS®2 Power-Transistor
IRLI3215 ,150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI3215PBF ,150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
IRLI3615 ,150V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides ahigh isolation capability and a low thermal res ..
