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IPD088N04L G INFINEON|Infineon N/a 2500 OptiMOS3 Power-Transistor



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IPD088N04L G , OptiMOS3 Power-Transistor
IPD09N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 8.9mOhm, 30A, LLFeatureV30 VDS• N-ChannelR 8.9 mΩDS(on)• Logic LevelI 30 AD• Low On-Resistance RDS(on)P- TO252 -3-1 ..
IPD09N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 8.6mΩDS(on),max 1)• Qual ..
IPD09N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =20 µ ..
IPD09N03LBG , OptiMOS®2 Power-Transistor
IRLB3036PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDDC Motor DriveV 60VDSSHigh Efficiency Synchronous Rectification in SMPSR typ.1 ..
IRLB3813 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Isolated DC-DC1.95m @V = 10V30V Ω 57nCGS C ..
IRLBA3803P ,30V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) packageapplications, reduce system power dissipation,upgrade existing designs or have TO-247 performance i ..
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