| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD068N10N3G |
INFINEON|Infineon |
N/a |
2500 |
 |
OptiMOS3 Power-Transistor |
IPD06N03 INFINEON
IPD06N03 英飞凌
IPD06N03L IN,CharacteristicsDrain-source breakdown voltage V 30 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate threshold voltage, V = V VGS DS GS(th)I = 80 µADµAZero ..
IPD068N10N3G , OptiMOS3 Power-Transistor
IPD06N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LLFeatureV30 VDS• N-ChannelR 5.9 mΩDS(on)• Logic LevelI 50 AD• Low On-Resistance RDS(on)P- TO252 -3-1 ..
IPD06N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mΩDS(on),max 1)• Qual ..
IPD06N03LA G , OptiMOS®2 Power-Transistor
IPD06N03LAG , OptiMOS®2 Power-Transistor
IRL640PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.1089
IRL640
International
142R Rectifier
HEXFETO Power MOSFET
q Dynamic dv/dt Rat ..
IRL7833 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package IRL7833IRL7833SIRL7833L
IRL7833L ,30V Single N-Channel HEXFET Power MOSFET in a TO-262 packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
