IC Phoenix
 
Home ›  II20 > IPD05N03LB,OptiMOS®2
IPD05N03LB Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IPD05N03LB英飞凌N/a12500avaiOptiMOS®2


IPD05N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =40 µ ..
IPD060N03L G , OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
IPD060N03LG , OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
IPD068N10N3G , OptiMOS3 Power-Transistor
IPD06N03L ,OptiMOS Power MOSFET, 30V, DPAK, RDSon = 5.9mOhm, 50A, LLFeatureV30 VDS• N-ChannelR 5.9 mΩDS(on)• Logic LevelI 50 AD• Low On-Resistance RDS(on)P- TO252 -3-1 ..
IPD06N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mΩDS(on),max 1)• Qual ..
IRL630A ,Power MOSFET
IRL630A ,Power MOSFET
IRL630S ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance andcan dissipate up to 2.0W in a typ ..
IRL640 ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low thermal resistance and ..
IRL640A ,Power MOSFET
IRL640PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD-9.1089 IRL640 International 142R Rectifier HEXFETO Power MOSFET q Dynamic dv/dt Rat ..


IPD05N03LB
OptiMOS®2
technologies IPD05N03LBG
optiMotsh Power-Transistor
Product Summary
Features VDS 30 V
. Ideal for hi h-fre uenc dc/dc converters
g q y RDS(on),max 4.8 mQ
. Qualified according to JEDECI) for target applications
ID 90 A
. N-channel, logic level
. Excellent gate charge x RDSM product (FOM)
. Superior thermal resistance
. 175 "C operating temperature PG-TO252-3-11
. Pb-free lead plating; RoHS compliant
Type Package Ordering Code Marking pln 1
|PD05N03LB G PG-T0252-3-11 Q67042-S4262 05N03LB gnugce
Maximum ratings, at Tj=25 ''C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current ID Tc=25 oC2) 90 A
Tc=100 °C 74
Pulsed drain current ID,pulse Tc=25 °C3) 420
Avalanche energy, single pulse EAS [0:90 A, Rss=25 f2 120 mJ
I 0:90 A, Vos=20 V,
Reverse diode dv/dt dv/dt di/dt=200 Alps, 6 kV/ps
Trmax=175 ''C
Gate source voltage') Vss E0 V
Power dissipation Ptot Tc=25 "C 94 W
Operating and storage temperature Ti, Tstg -55 ... 175 "C
IEC climatic category; DIN IEC 68-1 55/175/56
Rev. 1.2 page 1 2004-12-16
technologies IPD05N03LBG
Parameter Symbol Conditions Values Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RM; - - 1.6 K/W
SMD version, device on PCB RthJA minimal footprint - - 75
6 cm2 cooling area5) - - 50
. Pb-free lead plating; RoHS compliant
Electrical characteristics, at Tj=25 ''C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BRmSS b'ss=0 V, I D=1 mA 30 - - v
Gate threshold voltage Vesan) VDS=VGS, / D=40 pA 1.2 1.6 2
V =30 V, V =0 V,
Zero gate voltage drain current loss T382 0 GS - 0.1 1 pA
j- 5 C
VDS=30 V, Vss--0 V,
Tj=125 °C - 10 100
Gate-source leakage current I GSS VGS=20 V, Vos=0 V - 10 100 nA
Drain-source on-state resistance Rros(on) Vss--4.5 V, I D--50 A - 5.8 7.5 m9
VGS=10 V, 1--60 A,
SMD version - 3.9 4.8
Gate resistance RG - 1 - 9
V >2ll R ,
Transconductance " I PSI I DI DS(on)max 48 96 - S
ho--60 A
l) J-STD20 and JESD22
1) Current is limited by bondwire; with an Rtrur--1.6 KNVthe chip is able to carry 104 A.
3) See figure 3
4) lemax=150 ''C and duty cycle D<0.25 for Vss<-5 V
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 pm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.2
page 2
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED