Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IPD05N03L G |
INFINEON|Infineon |
N/a |
50 |
|
|
IPD05N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.1mΩDS(on),max1)• Quali ..
IPD05N03LA G , OptiMOS®2 Power-Transistor
IPD05N03LAG , OptiMOS®2 Power-Transistor
IPD05N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =40 µ ..
IPD060N03L G , OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS
IRL5602STRR ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
IRL5602STRR ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connectionresistance and can dissipate up to 2.0W in a typ ..
IRL5602STRRPBF ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingV = -20 ..