Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IPD04N03LAG |
INFINEON|Infineon |
N/a |
600 |
|
OptiMOS®2 Power-Transistor |
IPD04N03LAG , OptiMOS®2 Power-Transistor
IPD04N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IPD053N06N3G , OptiMOS(TM)3 Power-Transistor
IPD053N08N3G , OptiMOS3 Power-Transistor
IPD05N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 5.1mΩDS(on),max1)• Quali ..
IRL5602S ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 91888IRL5602S®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = -20VDS ..
IRL5602SPBF , HEXFET Power MOSFET
IRL5602STRL ,-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable of accommodating diesizes up to HE ..