| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPD038N04NG |
INFINEON|Infineon |
N/a |
50 |
 |
OptiMOS3 Power-Transistor |
IPD038N06N3 Infineon
IPD038N04NG , OptiMOS3 Power-Transistor
IPD038N06N3G , OptiMOS3 Power-Transistor
IPD03N03LA ,OptiMOS®2characteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =70 ..
IPD03N03LAG , OptiMOS®2 Power-Transistor
IPD03N03LB ,OptiMOS®2characteristicsV V =0 V, I =1 mADrain-source breakdown voltage 30 - - V(BR)DSS GS DV V =V , I =70 µ ..
IRL540 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRL540N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91495AIRL540N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 100 ..
IRL540N. ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
