| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPCU1C02 |
BL |
N/a |
400 |
 |
|
IPD031N03LG , OptiMOS™3 Power-Transistor
IPD038N04NG , OptiMOS3 Power-Transistor
IPD038N06N3G , OptiMOS3 Power-Transistor
IPD03N03LA ,OptiMOS®2characteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =70 ..
IPD03N03LAG , OptiMOS®2 Power-Transistor
IRL530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL530NSTRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplicationsWuan-eDem.
Absolute Maximum Ratings
Parameter Max. Units
ID tp To = 25''C Contin ..
IRL530S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
