| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPCS02 |
|
N/a |
182 |
 |
|
IPD031N03LG , OptiMOS™3 Power-Transistor
IPD038N04NG , OptiMOS3 Power-Transistor
IPD038N06N3G , OptiMOS3 Power-Transistor
IPD03N03LA ,OptiMOS®2characteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =70 ..
IPD03N03LAG , OptiMOS®2 Power-Transistor
IRL530N ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL530NPBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and l ..
IRL530NS ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
