Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IPB60R385CP |
INFINEON|Infineon |
N/a |
39 |
|
CoolMOSTM Power Transistor |
IPB60R520CP INFINEON, CoolMOS Power Transistor
IP-B63-CU VICOR
IPB70N03S INFINEON
IPB70N10L SIEMENS
IPB80N03 infineon
IPB80N03L INF
IPB80N04S2-04 INFINEON, OptiMOS® Power-Transistor
IPB80N04S2-H4 Infineon, OptiMOS® Power-Transistor
IPB80N04S3-04 INFINEON, OptiMOS-T Power-Transistor
IPB80N04S3-04 Intersil, OptiMOS-T Power-Transistor
IPB80N06S2L-05 Infineon, OptiMOS Power-Transistor
IPB80N06S2L-H5 IFN, OptiMOS Power-Transistor
IPB80N08S2-07 INF, OptiMOS® Power-Transistor
IPB80N08S2L-07 INFINEON, OptiMOS® Power-Transistor
IPB80P03P3L-04 infineon, OptiMOS-P Power-Transistor
IPBT-104-H1-T-D SAMTEC
IPBT-106-H1-T-D-RA SAMTEC
IPC1521 INTERPION
IPC1532
IPC4505 IPC
IPC-737005 DAEWOO
IPC8111 TOSHIBA
IPCA-NAA ALCTEL
IPCF8574T/3
IPCIC-01V
IPCS02
IPCU 1C02 ALCATEL
IPCU1C02 BL
IPCV-AAA ALCATEL
IPCW134SH ICW
IPD01A S
IPD02N60C3 INFINEON
IPB60R385CP , CoolMOSTM Power Transistor
IPD031N03LG , OptiMOS™3 Power-Transistor
IPD038N04NG , OptiMOS3 Power-Transistor
IPD038N06N3G , OptiMOS3 Power-Transistor
IPD03N03LA ,OptiMOS®2characteristicsDrain-source breakdown voltage V V =0 V, I =1 mA 25 - - V(BR)DSS GS DV V =V , I =70 ..
IRL3803STRL ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRL3803STRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Wm' Ti?i6Lte Maximum Ratings
Parameter Max. Units
l, © Tc = 25°C Continuous Drain ..
IRL3803STRRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational
TOR Rectifiera Demo
Logic-Level Gate Drive
Advanced Process Technology
Surfac ..