Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IPB114N03L G |
infineon |Infineon |
N/a |
5000 |
|
|
IPB114N03L G |
INF |
N/a |
13000 |
|
OptiMOS3 Power-Transistor |
IPB120N06N G infineon
IPB114N03L G , OptiMOS3 Power-Transistor
IPB12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
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IRL3402 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1697IRL3402PRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V ..
IRL3402PBF ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and l ..
IRL3705N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1370CIRL3705N®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyV = 5 ..