| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB107N20N3 G |
INFINEON|Infineon |
N/a |
1778 |
 |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) |
IPB107N20N3 G , OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPB10N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LLFeatureV 30 VDS• N-ChannelR max. SMD version 8.9 mΩDS(on)• Logic LevelI 73 AD• Low On-Resistance RD ..
IPB114N03L G , OptiMOS3 Power-Transistor
IPB12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IPB12CN10NG , OptiMOS™2 Power-Transistor Features N-channel, normal level Very low on-resistance R DS
IRL3303STRR ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1323BIRL3303S/L®HEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDV = ..
IRL3402 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL3402 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 9.1697IRL3402PRELIMINARY®HEXFET Power MOSFETl Advanced Process TechnologyDl Optimized for 4.5V ..
