| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB093N04L G |
infineon |Infineon |
N/a |
5000 |
 |
OptiMOS™3 Power-Transistor |
IPB096N03L INFINEON
IPB096N03L G infineon
IPB09N03 seimens
IPB09N03ALG INFINEON
IPB09N03L 英飞凌
IPB093N04L G , OptiMOS™3 Power-Transistor
IPB09N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 8.9mΩDS(on),max• N-chann ..
IPB09N03LA G , OptiMOS®2 Power-Transistor
IPB09N03LAG , OptiMOS®2 Power-Transistor
IPB100N04S2-04 , OptiMOS® Power-Transistor
IRL3202 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at powerdissipation levels to approximately 50 watts. The lowthermal resistance and l ..
IRL3202S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications becauseof its low internal connection resistance and can2dissipate up to 2.0W in a typ ..
IRL3215 ,150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and ..
