| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB050N06NG |
INF |
N/a |
790 |
 |
OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification |
IPB052N04N G infineon
IPB054N08N3G INFINEON, OptiMOS 3 Power-Transistor Features N-channel, normal level
IPB050N06NG , OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification
IPB055N03LG , OptiMOS™3 Power-Transistor
IPB05N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LLFeatureV 30 VDS• N-ChannelR max. SMD version 4.9 mΩDS(on)• Logic LevelI 80 AD• Very low on-resistan ..
IPB05N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 4.6mΩDS(on),max• N-chann ..
IPB05N03LAG , OptiMOS®2 Power-Transistor
IRL2910STRL ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofits low internal connection resistance and can dissipate upto 2.0W in a typi ..
IRL2910STRLPBF ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL3102 ,20V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at powerdissipation levels to approximately 50 watts. The lowthermal resistance and l ..
