| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB04CNE8NG |
Infineon |Infineon |
N/a |
14000 |
 |
OptiMOS™2 Power-Transistor |
IPB04CNE8NG , OptiMOS™2 Power-Transistor
IPB04N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
IPB04N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 3.9mΩDS(on),max• N-chann ..
IPB04N03LA G , OptiMOS®2 Power-Transistor
IPB050N06NG , OptiMOS™ Power-Transistor Features For fast switching converters and sync. rectification
IRL2910 ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRL2910PBF ,100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91375BIRL2910®HEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process Technology V = 10 ..
IRL2910S ,100V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
