| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB042N03L G |
Infineon|Infineon |
N/a |
14000 |
 |
IPB042N03LG |
IPB042N03L G , IPB042N03LG
IPB042N03LG , IPB042N03LG
IPB04CNE8NG , OptiMOS™2 Power-Transistor
IPB04N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
IPB04N03LA ,Low Voltage MOSFETsFeaturesV 25 VDS• Ideal for high-frequency dc/dc convertersR (SMD version) 3.9mΩDS(on),max• N-chann ..
IRL2703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resista ..
IRL2703PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation
levelstoapproximately50vvatts. The Iowthermal resistance T0-220A ..
IRL2703S ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because ofDits low internal connection resistance and can dissipate upto 2.0W in a typ ..
