| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB03N03LB |
INFINEON|Infineon |
N/a |
37 |
 |
OptiMOS®2 Power-Transistor |
IPB041N04N G infineon
IPB03N03LB , OptiMOS®2 Power-Transistor
IPB042N03L G , IPB042N03LG
IPB042N03LG , IPB042N03LG
IPB04CNE8NG , OptiMOS™2 Power-Transistor
IPB04N03L ,OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LLCharacteristics30 - - VDrain-source breakdown voltage V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thresh ..
IRL2505S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 91326DIRL2505S/L®HEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDV = ..
IRL2703 ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationTO-220ABlevels to approximately 50 watts. The low thermal resista ..
IRL2703PBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation
levelstoapproximately50vvatts. The Iowthermal resistance T0-220A ..
