| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IPB019N08N3G |
INFINEON|Infineon |
N/a |
67 |
 |
OptiMOS3 Power-transistor |
IPB021N04N Infineon
IPB021N06N3 G INFINEON, OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec.
IPB022N04L G INFINEON, OptiMOS3 Power-Transistor
IPB023N04N G INFINEON, OptiMOS™3 Power-Transistor
IPB019N08N3G , OptiMOS3 Power-transistor
IPB025N08N3G , OptiMOS3 Power-transistor
IPB030N08N3G , OptiMOS3 Power-Transistor
IPB037N06N3 G , OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
IPB039N04L G , OptiMOS3 Power-Transistor
IRL1404S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL1404ZS ,40V Single N-Channel HEXFET Power MOSFET in a D2Pak packageapplications.IRL1404Z IRL1404ZS IRL1404ZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 2 ..
IRL2203N ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
