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INA322EA/2K5G4 TI/BB|Texas Instruments N/a 116 microPower, Single-Supply, CMOS NTATION AMPLIFIER



INA326 TI,ELECTRICAL CHARACTERISTICS: V = +2.7V to +5.5VSBOLDFACE limits apply over the specified temperature range, T = –40°C to +85°CAAt T = +25°C, R = 10kΩ ..
INA322EA/2K5G4 , microPower, Single-Supply, CMOS NTATION AMPLIFIER
INA326 ,Precision, Low Drift, CMOS Instrumentation AmplifierFEATURESThe INA326 and INA327 (with shutdown) are high-perfor-* PRECISIONmance, low-cost, precision ..
INA326EA/250 ,Precision, Low Drift, CMOS Instrumentation AmplifierELECTRICAL CHARACTERISTICS: V = +2.7V to +5.5V (Cont.)SBOLDFACE limits apply over the specified tem ..
INA326EA/250 ,Precision, Low Drift, CMOS Instrumentation AmplifierINA326INA327INA326INA327SBOS222D – NOVEMBER 2001 – REVISED NOVEMBER 2004Precision, Rail-to-Rail I/O ..
INA326EA/250 ,Precision, Low Drift, CMOS Instrumentation AmplifierMAXIMUM RATINGSELECTROSTATICSupply Voltage . +5.5V(2) DISCHARGE SENSITIVITYSignal Input Terminals: ..
IRFR5505TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Powert possible in typical SUIAbsolute Maximum Ratings Parameter Max. Units ID ..
IRFR6215 ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215PBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91749IRFR/U6215PRELIMINARY®HEXFET Power MOSFETl P-ChannelDl 175°C Operating TemperatureV = -15 ..
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