INA131AP ,Precision G = 100 INSTRUMENTATION AMPLIFIERFEATURES DESCRIPTIONl LOW OFFSET VOLTAGE: 50μV max The INA131 is a low cost, general purpose G = 10 ..
INA131AP ,Precision G = 100 INSTRUMENTATION AMPLIFIERFEATURES DESCRIPTIONl LOW OFFSET VOLTAGE: 50μV max The INA131 is a low cost, general purpose G = 10 ..
INA131AP ,Precision G = 100 INSTRUMENTATION AMPLIFIERINA131®INA131Precision G = 100INSTRUMENTATION AMPLIFIER
INA131BP ,Precision G = 100 INSTRUMENTATION AMPLIFIERINA131®INA131Precision G = 100INSTRUMENTATION AMPLIFIER
INA131BP. ,Precision G = 100 INSTRUMENTATION AMPLIFIERFEATURES DESCRIPTIONl LOW OFFSET VOLTAGE: 50μV max The INA131 is a low cost, general purpose G = 10 ..
INA132 ,Low Power, Single-Supply DIFFERENCE AMPLIFIERINA132INA132®INA132Low Power, Single-SupplyDIFFERENCE AMPLIFIER
IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageapplications.Super-247™Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Cu ..
IRFPS3810 ,100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagePD - 93912BIRFPS3810®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceV = ..
IRFPS3815 ,150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageapplications.Super-247™Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Cu ..
IRFPS38N60L ,600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageFeatures and Benefits• • ..
IRFPS40N50L ,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageFeatures and Benefits• • ..
IRFPS40N60K ,600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packagePD - 94384SMPS MOSFETIRFPS40N60K®HEXFET Power MOSFET
INA131AP-INA131BP-INA131BP.
Precision G = 100 Instrumentation Amplifier 8-PDIP -40 to 85
INA131 ® INA131 Precision G = 100 INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION lLOW OFFSET VOLTAGE: 50μV max The INA131 is a low cost, general purpose G = 100 instrumentation amplifier offering excellent accuracy. lLOW DRIFT: 0.25μV/°C max Its 3-op amp design and small size make it ideal for lLOW INPUT BIAS CURRENT: 2nA max a wide range of applications. lHIGH COMMON-MODE REJECTION: On-chip laser trimmed resistors accurately set a fixed 110dB min gain of 100. The INA131 is laser trimmed to achieve lINPUT OVERVOLTAGE PROTECTION: very low offset voltage (50μV max), drift (0.25μV/°C ±40V max), and high CMR (110dB min). Internal input lWIDE SUPPLY RANGE: ±2.25 to ±18V protection can withstand up to ±40V inputs without damage.lLOW QUIESCENT CURRENT: 3mA The INA131 is available in a 8-pin plastic DIP. Theyl8-PIN PLASTIC DIP are specified over the –40°C to +85°C temperature range. APPLICATIONS lBRIDGE AMPLIFIER lTHERMOCOUPLE AMPLIFIER lRTD SENSOR AMPLIFIER lMEDICAL INSTRUMENTATION lDATA ACQUISITION V+ 7 INA131 – 2 Over-Voltage V IN Protection A 1 5kΩ 25kΩ 1 25kΩ 6 +– A 2.63kΩ V = 100 (V – V ) 3 O IN IN 8 25kΩ 5 A Ref 2 + 3 Over-Voltage 5kΩ 25kΩ V IN Protection 4 DIP V– International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ©1992 Burr-Brown Corporation PDS-1144E Printed in U.S.A. March, 1998 SBOS016
