Partno |
Mfg |
Dc |
Qty |
Available | Descript |
IMB5A |
ROHM |
N/a |
3000 |
|
General purpose (dual digital transistors) |
IMB5A T108 ROHM
IMB6 ROHM
IMB6 T108 ROHM
IMB6 T108(B6) ROHM
IMB7 ROHM
IMB7 T108(B7) ROHM
IMB7 T109(B7) ROHM
IMB7A T108 ROHM
IMB8 ROHM
IMB8AT108 ROHM
IMB8T108 ROHM
IMB8T108
IMB9 ROHM
IMB9 T110 ROHM
IMB9 T110(B9) ROHM
IMB9A ROHM, General purpose dual digital transistors
IMB9A T110 ROHM
IMB9AT108 ROHM
IMB9AT110 ROHM
IMBD4148 VISHAY, Document Number 882032 14-May-02IMBD4148Vishay Semiconductorsformerly General SemiconductorRatings and Characteristic Curves (T = 25°C unless otherw ..
IMB5A , General purpose (dual digital transistors)
IMBD4148 ,Small Signal DiodesThermal Characteristics (TA = 25°C unless otherwise noted)Parameter Symbol Value UnitReverse Voltag ..
IMBD4148-V-GS08 , Small Signal Switching Diode
IMBD4448 ,Small Signal DiodesElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
IMC-1210 ,Molded, Wirewound InductorELECTRICAL SPECIFICATIONSInductance Range: 0.01µH to 220µH.TEST SELF- RATED*Inductance Tolerance: ..
IRF7433 ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packageapplications. With these improvements, multipledevices can be used in an application with dramatic ..
IRF7433TRPBF ,-12V Single P-Channel HEXFET Power MOSFET in a SO-8 packagePD - 95305IRF7433PbF®HEXFET Power MOSFET Ultra Low On-ResistanceV R max IDSS DS(on) D P-Channel M ..
IRF744 ,450V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..