| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| IHW30N100R |
Infineon |Infineon |
N/a |
600 |
 |
Reverse Conducting IGBT with monolithic body diode |
IHW30N110R3 Infineon
IHW30N120R Infineon, IGBT with monolithic body diode for soft switching Applications
IHW30N100R , Reverse Conducting IGBT with monolithic body diode
IHW30N120R2 , Reverse Conducting IGBT with monolithic body diode
IHW30N90T , Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
IHW40N60T , Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode
IHW40T120 ,IGBTs & DuoPacksapplications offers : - very tight parameter distribution - high ruggedness, temperature stable b ..
IRF130 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VPD - 90333F IRF13 ..
IRF1302S ,20V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRF1302S IRF1302LAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous D ..
IRF131 ,N-Channel Power MOSFETs/ 20 A/ 60-100 VElectrical Characteristics (T c= 25°C unless otherwise noted)
Symbol Characteristic Min Max Unlt T ..
