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IGB50N60TINFINEONN/a8550avai1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
IGP50N60TINFINEONN/a20094avai1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
IGW50N60TInfineon N/a124avai1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...


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IGB50N60T-IGP50N60T-IGW50N60T
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T Low Loss IGBT in Trench and Fieldstop technology Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
• Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) Positive temperature coefficient in VCE(sat)
• Low EMI Low Gate Charge Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
V
°C
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T Thermal Resistance
Characteristic

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic

Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic

IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T R CU
100Hz1kHz10kHz100kHz
20A
40A
60A
80A
100A
120A
140A
R CU10V100V1000V
10A
100Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency

(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 7Ω)
Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤175°C;
VGE=15V)
t,
R D
SSI
25°C50°C75°C100°C125°C150°C0W
50W
100W
150W
200W
250W
300W
R CU
25°C75°C125°C
20A
40A
60A
80ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature

(Tj ≤ 175°C)
Figure 4. Collector current as a function of
case temperature

(VGE ≥ 15V, Tj ≤ 175°C)
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T COL
CUR1V2V3V
20A
40A
60A
80A
100A
120A
COL
CUR1V2V3V4V
20A
40A
60A
80A
100A
120AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic

(Tj = 25°C)
Figure 6. Typical output characteristic

(Tj = 175°C)
COL
CUR2V4V6V8V0A
20A
40A
60A
80A
(sat),
COL
T S
AGE
0°C50°C100°C150°C0.0V
0.5V
1.0V
1.5V
2.0V
2.5VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V) Figure 8. Typical collector-emitter saturation voltage as a function of
junction temperature

(VGE = 15V)
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T CHIN
TIME20A40A60A80A
10ns
100ns
CHIN
TIME5Ω10Ω15Ω20Ω25Ω10ns
100nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current

(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 7Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor

(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
CHIN
TIME
25°C50°C75°C100°C125°C150°C10ns
100ns
(th
),
GAT
TRS
VO
AGE
-50°C0°C50°C100°C150°C0VTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature

(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, RG=7Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature

(IC = 0.8mA)
IGP50N60T, IGB50N60T TrenchStop Series IGW50N60T G EN20A40A60A80A
0.0mJ
2.0mJ
4.0mJ
6.0mJ
8.0mJ
*) Eon and Ets include losses
due to diode recovery
G EN10Ω20Ω
0.0mJ
1.0mJ
2.0mJ
3.0mJ
4.0mJ
5.0mJ
6.0mJ
*) Eon and Ets include losses
due to diode recoveryIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current

(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 7Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor

(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
G EN
25°C50°C75°C100°C125°C150°C
0.0mJ
1.0mJ
2.0mJ
3.0mJ
*) Eon and Ets include losses
due to diode recovery
G EN
300V350V400V450V500V550V0mJ
1mJ
2mJ
3mJ
4mJ
*) Eon and Ets include losses
due to diode recoveryTJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction
temperature

(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, RG = 7Ω,
Figure 16. Typical switching energy losses as a function of collector emitter
voltage

(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 50A, RG = 7Ω,
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