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HYB5117800BSJ-50-HYB5117800BSJ-60 Fast Delivery,Good Price
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HYB5117800BSJ-50 |HYB5117800BSJ50SIEMENSN/a500avai2M x 8 Bit 2k 5 V 50 ns FPM DRAM
HYB5117800BSJ-60 |HYB5117800BSJ60SIEMENSN/a26avai2M x 8 Bit 2k 5 V 60 ns FPM DRAM
HYB5117800BSJ-60 |HYB5117800BSJ60INFINEONN/a15avai2M x 8 Bit 2k 5 V 60 ns FPM DRAM


HYB5117800BSJ-50 ,2M x 8 Bit 2k 5 V 50 ns FPM DRAMHYB 5117800/BSJ-50/-602M · 8 - Bit Dynamic RAMHYB 3117800BSJ-50/-602k Refresh(Fast Page Mode)Advanc ..
HYB5117800BSJ-60 ,2M x 8 Bit 2k 5 V 60 ns FPM DRAMHYB 5117800/BSJ-50/-602M · 8 - Bit Dynamic RAMHYB 3117800BSJ-50/-602k Refresh(Fast Page Mode)Advanc ..
HYB5117800BSJ-60 ,2M x 8 Bit 2k 5 V 60 ns FPM DRAMHYB 5117800/BSJ-50/-602M · 8 - Bit Dynamic RAMHYB 3117800BSJ-50/-602k Refresh(Fast Page Mode)Advanc ..
HYB5118160BSJ-60 ,1M x 16 Bit 5 V 60 ns FPM DRAM
HYB5118165BSJ-50 ,1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BSJ-60 ,1M x 16-Bit Dynamic RAM 1k Refresh
ICS9UMS9610CKLFT , PC MAIN CLOCK
ICSLV810FILFT , Buffer/Clock Driver
ICT49FCT3805ASO , 3.3V CMOS BUFFER/CLOCK DRIVER
ICTE-18 ,Diode TVS Single Uni-Dir 18V 1.5KW 2-Pin Case 41A-04 Boxapplications0.210 (5.3) • High temperature soldering guaranteed:O0.190 (4.8) 265 C/10 seconds, 0.37 ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 Box Document Number 883562 23-May-03ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386Visha ..
ICTE-5 ,Diode TVS Single Uni-Dir 5V 1.5KW 2-Pin Case 41A-04 BoxThermal Characteristics (T = 25°C unless otherwise noted)AParameter Symbol Limit UnitPeak pulse pow ..


HYB5117800BSJ-50-HYB5117800BSJ-60
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
SIEMENS
2M M 8 " Bit Dynamic RAM HYB 5117800/BSJ-50l-60
2k Refresh HYB 3117800BSJ-50l-60
(Fast Page Mode)
Advanced Information
. 2 097 152 words by 8-bit organization
. 0 to 70 °C operating temperature
. Fast Page Mode operation
. Performance:
-50 -60
tRAC R/VS access time 50 60 ns
tCAc m access time 13 15 ns
tAA Access time from address 25 30 ns
ch ReadNVrite cycle time 84 104 ns
tPC Fast page mode cycle time 35 40 ns
. Power dissipation:
HYB5117800 HYB3117800
-50 -60 -50 -60
Power Supply 5 i 10% 3.3 i 0.3 V
Active 440 385 288 252 mW
TTL Standby 11 7.2 mW
CMOS Standby 5.5 3.6 mW
. Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh
and test mode
. All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
. 2048 refresh cycles / 32 ms (2k-refresh)
. Plastic Package: P-SOJ-28-3 400 mil
Semiconductor Group 1 1998-10-01
SIEMENS
HYB 5(3)117800/BSJ-50l-60
2M x 8 DRAM
The HYB 5(3)117800 are 16 MBit dynamic RAMs based on the die revisions "G'' & "F'' and
organized as 2 097 152 words by 8-bits. The HYB 5(3)117800 utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)117800 to
be packaged in a standard SOJ-28 plastic package. Package with 400 mil width are available.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insert
Ordering Information
ion equipment.
Ordering Code
Package Descriptions
HYB 5117800BSJ-50
Q67100-Q1092
P-SOJ-28-3 400 mil 5 V 50 ns FPM-DRAM
HYB 5117800BSJ-60
Q67100-Q1093
P-SOJ-28-3 400 mil 5 V 60 ns FPM-DRAM
HYB 3117800BSJ-50
on request
P-SOJ-28-3 400 mil 3.3 V 50 ns FPM-DRAM
HYB 3117800BSJ-60
on request
P-SOJ-28-3 400 mil 3.3 V 60 ns FPM-DRAM
Pin Names and Configuration
P-SOJ-28 400 mil
A0 - A10 Row Address Inputs
A0 - A9 Column Address Inputs VCCE IC)
- l/OI E 2
ES Row Address Strobe I /02 E 3
OE Output Enable |/03 E 4
l/OI - l/O8 Data Input/Output I/0_4 E 5
- WE 6
C_AS Column Address Strobe R/ts E 7
WE Read/Write Input NC. C 8
Vcc Power Supply A10 E 9
+5VforHYB 5117800 ADC 10
+ 3.3 v for HYB 3117800 A15 11
A2 E 12
V33 Ground (0 V) A3 E 13
N.C. Not Connected VCCE 14
Semiconductor Group
Cl Vss
Cl 1/08
Cl 1/07
Cl 1/06
Ll 1/05
Cl O_E
Cl Vss
SPP02803
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