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HYB314400BJ-60 |HYB314400BJ60SIEMENSN/a7500avai1M x 4 Bit FPM DRAM 3.3 V 60 ns


HYB314400BJ-60 ,1M x 4 Bit FPM DRAM 3.3 V 60 ns1M · 4-Bit Dynamic RAM HYB 314400BJ-50/-60Advanced Information• 1 048 576 words by 4-bit organizat ..
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HYB314400BJ-60
1M x 4 Bit FPM DRAM 3.3 V 50 ns
SIEMENS
1M M 4-Bit Dynamic RAM HYB 3144OOBJ-50l-60
Advanced Information
. 1 048 576 words by 4-bit organization
. 0 to 70 °C operating temperature
q Fast Page Mode Operation
. Performance:
-5O -60
tRAC Rg-is access time 50 60 ns
tCAC C/VS access time 13 15 ns
tAA Access time from address 25 30 ns
tRC Read/Write cycle time 95 110 ns
tec Fast page mode cycle time 35 40 ns
q Fast access and cycle time
Single + 3.3 V (i 0.3 V) supply with a built-in VBB generator
. Low power dissipation
max. 252 mWactive (-50 version)
max. 216 mWactive (-60 version)
. Standby power dissipation:
7.2 mW max. standby (LVTTL)
3.6 mW max. standby (LVCMOS)
. Output unlatched at cycle end allows two-dimensional chip selection
. Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
. All inputs and outputs LVTTL-compatible
q 1024 refresh cycles / 16 ms
. Plastic Packages: P-SOJ-26/20-2 with 300 mil width
Semiconductor Group 1 1998-10-01
SIEMENS
HYB 3144OOBJ-5OI-60
3.3 V 1M x4 DRAM
The HYB 3144OOBJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.
The HYB 3144OOBJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 3144OOBJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 3.3 V (i 0.3 V) power supply, direct
interfacing with high performance logic device families.
Ordering Information
Ordering Code
Package
Descriptions
HYB 314400BJ-50
on request
P-SOJ-26/20-2 300 mil
3.3 V DRAM (access time 50 ns)
HYB 3144OOBJ-60
on request
P-SOJ-26/20-2 300 mil
3.3 V DRAM (access time 60 ns)
Semiconductor Group
ic,good price


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