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HUFA75332S3SFAIRCHILDN/a2400avai60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs


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HUFA75332S3S
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75332G3, HUFA75332P3, HUFA75332S3S
60A, 55V , 0.019 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75332.
Features
60A, 55V Simulation Models Temperature Compensated PSPICE® and SABER™
Models SPICE and SABER Thermal Impedance Models
Available on the WEB at: Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at:
http:///products/discrete/reliability/index.html.
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75332S3ST.
JEDEC STYLE TO-247 JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
GATE
DRAIN
(TAB)SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
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