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HUFA75321S3STINTERSILN/a33750avai35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs


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HUFA75321S3ST
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
HUFA75321P3, HUFA75321S3S
35A, 55V , 0.034 Ohm, N-Channel UltraFET
Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features
35A, 55V Simulation Models Temperature Compensated PSPICE® and SABER™
Models Thermal Impedance SPICE and SABER Models
Available on the WEB at: Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at:
http:///products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75321S3ST.SOURCE
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
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