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HUF76113SK8T Fast Delivery,Good Price
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HUF76113SK8TINTERSILN/a10000avai6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76113SK8TFAIN/a2241avai6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET


HUF76113SK8T ,6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFETElectrical Specifications T = 25 C, Unless Otherwise SpecifiedA PARAMETER SYMBOL TEST CONDITIONS MI ..
HUF76113SK8T ,6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFETapplications where power  Peak Current vs Pulse Width Curveefficiency is important, such as switch ..
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HUF76113SK8T
6.5A, 30V, .0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
HUF76113SK8
6.5A, 30V , 0.030 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™ process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery-
operated products.
Formerly developmental type TA76113.
Features
Logic Level Gate Drive 6.5A, 30V Ultra Low On-Resistance, r DS(ON) = 0.030Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER™ Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC MS-012AA
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113SK8T.
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