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HUF76107D3STINTELN/a1780avai20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs


HUF76107D3ST ,20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsHUF76107D3, HUF76107D3SData Sheet January 200320A, 30V, 0.052 Ohm, N-Channel, Logic
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HUF76107D3ST
20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
HUF76107D3, HUF76107D3S
20A, 30V , 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET™ process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Features
Logic Level Gate Drive 20A, 30V Ultra Low On-Resistance, r DS(ON) = 0.052Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER© Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
JEDEC TO-251AA JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
GATE DRAIN
(FLANGE)GATE
SOURCE
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