HUF75329D3S ,20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75329D3ST ,20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75329P3 ,49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETsapplications where power UIS Rating Curveefficiency is important, such as switching regulators, ..
HUF75329S3ST ,49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETsapplications where power UIS Rating Curveefficiency is important, such as switching regulators, ..
HUF75332P3 ,60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETsapplications where power Related Literature efficiency is important, such as switching regulators ..
HUF75332P3 ,60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
ICL3232IA ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3232IB ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverfeatures of the devices represented
ICL3232IBN ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverFeatures (Except computers. Both devices also include noninverting always-ICL3232)active receivers ..
ICL3232IV ,One microamp supply-current, +3V to +5.5V, 250kbps, RS-232 transmitter/receiverICL3221, ICL3222, ICL3223, ICL3232,®ICL3241, ICL3243Data Sheet November 2003 FN4805.11One Microamp ..
ICL3237ECA ,+-15kV ESD Protected, 10nA Supply- Current, +3V to +5.5V, 250k/1Mbps, RS-232 Transmitters/Receiversapplications are cell phones, Latch-Up FreePDAs, Palmtops, and notebook and laptop computers wher ..
ICL3237EIA ,+-15kV ESD Protected, 10nA Supply- Current, +3V to +5.5V, 250k/1Mbps, RS-232 Transmitters/ReceiversFeaturesCurrent, +3V to +5.5V, 250k/1Mbps, ESD Protection For RS-232 I/O Pins to ±15kV (IEC61000) ..
HUF75329D3S
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
HUF75329D3, HUF75329D3S
20A, 55V , 0.026 Ohm, N-Channel UltraFET
Power MOSFETsThese N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features 20A, 55V Simulation Models Temperature Compensated PSPICE® and SABER™
Models SPICE and SABER Thermal Impedance Models
Available on the WEB at: Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Product reliability information can be found at http:///products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
Ordering InformationNOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF75329D3ST.
JEDEC TO-251AA JEDEC TO-252AA
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