| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HSC3953 |
|
N/a |
10000 |
 |
Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR |
| HSC3953 |
华昕 |
N/a |
2000 |
|
Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR |
HSC3953D HSMC
HSC3953E HSMC
HSC3953F HSMC
HSC3953S-D 华昕
HSC3953S-E 华昕
HSC3-A30091-5 HARRIS
HSC4140
HSC5094 华昕,Sincerity Mocroelectronics - NPN SILICON BIPOLAR TRANSISTOR
HSC5094-0
HSC5094M-R-TL 华昕
HSC5094-O HI-SINCE
HSC5094SN 华昕
HSC5094-Y
HSC702JM BB
HSC7808
HSC7811
HSC88TRF HITACHI
HSC945-K 华昕
HSC945-P 华昕
HSC-ADC-AD922XFFA ADI
HSC-ADC-DEMUX ADI
HSCDTD002B ALPS
HSCF24040ACJ SPT
HSCF24040ACJ HONEYWELL
HSC3953 ,Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR
HSCH-9401 ,HSCH-9401 · Bondable GaAs Schottky barrier diodesFeatures•f >800 GHzC• Low junction capacitance– typically 35 fF• Low series resistance– typically 6 ..
HSD119 , Silicon Epitaxial Planar Diode for High Speed Switching
HSD882 ,Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR
HSD882S ,Sincerity Mocroelectronics - NPN EPITAXIAL PLANAR TRANSISTOR
HYB18L128160BC-7.5 ,Very low Power SDRAM optimized for battery-powered, handheld applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
HYB18L128160BF-7.5 ,Very low Power SDRAM optimized for battery-powered, handheld applicationsApplications128-Mbit Mobile-RAM Memory ProductsNeve r stop t h in king . Edition 2004-04-30Publish ..
HYB18L256160BC-7.5 ,Very low Power SDRAM optimized for battery-powered, handheld applicationscharacteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any an ..
