HN9C01FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS Q2 (Ta =25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcut-ofrcu ..
HO1045 , 915.0 MHz SAW Oscillator
HOS-050 ,Fast Settling Video Operational AmplifierFEATURES
80ns Settling to 0.1%; 200ns lo 0.01%
100MHz Gain Bandwidth Product
55MHZ 3dB Bandwid ..
HOS-050C ,Fast Settling Video Operational AmplifierGENERAL DESCRIPTION
Thc Hos-oso, Hosmm, and HOSVOSOLZ p amp» am: very
lugh speed widchund opcuu ..
HP190 , HP 190 POLYPROPYLENE ENCLOSURE 325-990
HP3150 ,HP3150 FaxsY"‘S”TEM [RENT]
Computer mielen, wenn man sie braucht!Wuan-eDem.
Physical spec cations “NN-
..
HY57V641620HGT-HI , 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-47 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220CT-55 , 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220DT-7 , 4Banks x 512K x 32bits Synchronous DRAM
HN9C01FT
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA HN9CO1FT
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Two devices are built in to the super-thin and ultra super mini 2 1 t0.1
(6pins) package : TU6 J2't,'iC-,
‘E TCl
MOUNTED DEVICES N - lil, 5 m
f; ‘3 C2 2,... - gg'
. er' 3H. 4 _'''
Three-pins (SSM) mold products are 2SC509 6 280508 6 Lu. Tli,
corresponded. m
MAXIMUM RATINGS (Ta = 25°C) J i E
CHARACTERISTIC SYMBOL Q1 Q2 UNIT tlil,). «T -
Collector-Base Voltage VCBO 20 V 6 ©
Collector-Emi; Voltage VCEO 8 12 V l. COLLECTOR 1 4. BASE 2
. 2. EMITTER1 5. EMITTER2
Emitter-Base Voltage VEBO 1.5 3 V 3. COLLECTOR 2 6. BASE 1
Collector Current IC 15 80 mA JEDEC -
Base Current . IB 7 40 mA JEIT A -
Collector Power Dissipation PC 200 mW TOSHIBA 2 2 AIC
Junction Temperature Ti 125 T . - J
Storage Temperature C) Weight : 0.008g
MARKING PIN ASSIGNMENT (TOP VIEW)
6 5 4 Type Name B1 E2 B2
Fl Fl 7 / F1 F1 Fl
M QIFHLEQz
tat tat :1 d d txt
1 2 3 Cl E1 C2
1 2001-12-10
TOSHIBA HN9CO1FT
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VCB = 10V, IE = 0 - - 1 pzA
Emitter Cut-off Current IEBO VEB = IV, IC = 0 - - 1 PA
DC Current Gain hFE VCE = 6V, 1C = 7mA 50 - 160 -
Transition Frequency fT VCE = 6V, IC = 7 mA 7 10 - GHz
. . IS21el2 (1) VCE 26V, Ic=7mA, f=1000MHz - 13 - dB
Insertion Gain lS2 Lf (2) VCE = 6V, IC = 7mA, f-- 2000MHz 4.5 7.5 - dB
N . Fi NF (1) VCE=6V, Ic=3mA, f=1000MHz - 1.4 - dB
o1se Igure NF (2) VCE =6V, IC=3mA, f= 2000MHz - 1.8 3 dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VCB = 10V, IE = 0 - - 1 PA
Emitter Cut-off Current IEBO VEB = IV, 1C = 0 - - 1 PA
DC Current Gain hFE VCE = 10V, IC = 20mA 80 - 240 -
Transition Frequency fT VCE = 10V, 10 = 20mA 5 7 - GHz
VCE = 10V, IC = 20mA,
I ti G . lS21d (1) f=500MHz 16.5 dB
nser lon am Is F (2) VCE = 10V, IC = 20mA, 8 11 dB
21e f-- 1000MHz -
NF (1) VCE = 10V, IC = 5mA, f-- 500MHz - 1 - dB
Noise Figure VCE = 10V, IC = 5mA,
NF (2) f= 1000MHz - 1.1 2 dB
2 2001 -1 2-1 0
TOSHIBA HN9CO1FT
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-12-10
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