| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| HN58C65P-25 |
HITACHI |
N/a |
34 |
 |
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| HN58C65P-25 |
|
N/a |
15 |
|
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| HN58C65P-25 |
HIT |
N/a |
12 |
|
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
| HN58C65P-25 |
HIT |
N/a |
3000 |
|
8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM |
HN58C65PJ-25 HITACHI
HN58C66 HIT
HN58C66-25T HIT
HN58C66FP-257 HIT
HN58C66FP-25T HITACHI
HN58C66FP-25T HITACHI
HN58C66FP-25T HIT
HN58C66FR-257
HN58C66P-25
HN58C66P-25 HITACHI
HN58C66P-25 HIT
HN58C66T25 HITACHI
HN58V1001FP-25 HITACHI, 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function
HN58V1001T-25 HIT, 1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function
HN58V256AFPI-12 HIT
HN58V256AT-12 RENESAS, 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V256ATI-12
HN58V256ATI-12 HIT
HN58C65P-25 , 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
HN58V257AT-12 , 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)
HN58V65AFP-10 , 64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)
HN58V65AFP-10 , 64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)
HN58V65AFP-10 , 64 k EEPROM (8-kword × 8-bit) Ready/Busy Function, RES Function (HN58V66A)
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
