HN4B101J ,Power transistor for high-speed switching applicationsAbsolute Maximum Ratings (Ta = 25°C) Rating 1. Base (PNP) Characteristic Symbol Unit 2. Emitter (PN ..
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HN4B101J
Power transistor for high-speed switching applications
HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
HN4B101J MOS Gate Drive Applications
Switching Applications Small footprint due to a small and thin package High DC current gain : hFE = 200 to 500 (IC = −0.12 A)
• Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max)
: NPN VCE (sat) = 0.17 V (max)
• High-speed switching : PNP tf = 45 ns (typ.)
: NPN tf = 50 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
Weight: 0.014g (typ.)
