HN2C12FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
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HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2C12FT
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
TOSHIBA HN2C12FT
TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
0 Two devices are built in to the super-thin and ultra super mini 1.25t0.1
(6 pins) package : TU6 1 6
m LT In
g g g 5 #3
MOUNTED DEVICES l' 3:; m 2E -EF't'?
Q1/Q2 ay' 3a Ir-dl
Three-pins (SSM) mold products are 2SC509 6 3
corresponded ‘3,
MAXIMUM RATINGS (Ta = 25°C) sr-U ii,) -
CHARACTERISTIC SYMBOL RATING UNIT ‘3 g,
Collector-Base Voltage VCBO 20 V
. l. EMITTER 1 4. COLLECTOR 2
Collector-Emltter Voltage VCEO 8 V 2. EMITTER 2 5. BASE 1
Emitter-Base Voltage VEBO 1.5 V 3. BASE 2 6. COLLECTOR 1
Collector Current IC 15 mA JEDEC -
Base Current . IB 7 mA JEIT A -
Collector Power Dissipation PC 200 mW TOSHIBA 2 2 AIA
Junction Temperature Tj 125 T . - J
Storage Temperature Range Tstg -55--125 "C Weight : 0.008g
PIN ASSIGNMENT (TOP VIEW) MARKING
C1 B1 C2 6 5 4 Type Name
my-l EQZ M
E1 E2 B2 1 2 3
1 2001-12-10
TOSHIBA HN2C12FT
ELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VCB = 10V, IE = 0 - - 1 pA
Emitter Cut-off Current IEBO VEB = 1 V, 1C = 0 - - 1 PA
DC Current Gain hFE VCE = 6V, 1C = 7 mA 50 - 160 -
Transition Frequency fT VCE = 6V, IC = 7mA 7 10 - GHz
. . lS21d2 Q1 VCE = 6V, IC = 7mA, 4 7.5 - dB
Insertion Gain IS21e|2 Q2 f = 2000 MHz 4 5 8 - dB
VCE = 6V, IC = 3mA,
N . Fi NF(1) f= 1000 MHz - 1.3 - dB
01se lgure NF (2) VCE = 6V, 1C = 3mA, 1 8 3
f = 2000 MHz - .
Reverse Transfer Cre Q1 VCB = 10 V, IE = o, - 0.35 0.85 F
Capacitance Cre Q2 f = 1 MHz (Note) - 0.4 0 9 p
(Note) : Cre is measured by 3 terminal method capacitance bridge.
TOSHIBA HN2C12FT
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-12-10
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