HN2C10FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN2C12FT ,TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Q1, Q2) (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITco11ectorcu ..
HN2C12FU ,RF 2-in-1 Hybrid TransistorsAPPLICATIONS Unit in mm2.11010 Including Two Devices in U86 (Ultra Super Mini Type with 6 ' _T.csaA ..
HN2D01F ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Applicatio ..
HN2D01FU ,Diode Silicon Epitaxial Planar Type Ultra High Speed Switching ApplicationHN2D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Unit in mmUltra High Speed Switchi ..
HN2D01JE ,Switching diodeElectrical Characteristics (Ta = 25°C) TestCharacteristic Symbol Test Condition Min Typ. Max UnitCi ..
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY29LV400TT-55 , 4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory
HY514400A , 1M x 4-bit CMOS DRAM
HY53C256 , 256K x 1-Bit CMOS DRAM
HY-5610 , SUBMINIATURE CONTROLLER FOR THERMOELECTRIC COOLERS
HY57V161610ET-55 , 2 Banks x 512K x 16 Bit Synchronous DRAM
HN2C10FU
RF 2-in-1 Hybrid Transistors
TOSHIBA HN2C10FU
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
HN2C10FU
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm
2.1 -+0.1
0 Including Two Devices in US6 (Ultra Super Mini Type with 6 1.25h0.1
_ . , .
Leads) l
MAXIMUM RATINGS (Ta=25°C) N - li? ( - , IF,] m
ai ei' 1''-rrs--l-E, gt
CHARACTERISTIC SYMBOL RATING UNIT tl r: li', 2 5 'd.
Collector-Base Voltage VCBO 20 V o EsE I $_-
Collector-Emitter Voltage VCEO 12 V I 3
Emitter-Base Voltage VEBO 3 V iii' I Ct',,
Base Current IB 40 mA g f i ii g
Collector Current IC 80 mA i) -
Collector Power Dissipation PC'' 200 mW g,
Junction Temperature Tj 125 C 1. EMITTER 1 (E 1)
Storage Temperature Range Tstg -55--125 "C 2. EMITTER 2 (E2)
3. BASE 2 (B2)
* : Total 4. COLLECTOR 2 (c2)
MARKING PIN ASSIGNMENT (TOP VIEW) ' EéiEELTOR 1 E2];
6 5 4 Type Name 6 5 4 JEDEC -
H Fl , Fl Fl Fl EIAJ -
M ah-] r-ias, TOSHIBA
txt I: I: tai tat d
1 2 3 1 2 3
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 PA
Emitter Cut-off Current IEBO VEB=1V, Iczo - - 1 PA
DC Current Gain hFE VCE=10V, 10:20mA 80 - 240 -
Transition Frequency fT VCE=10V, Ic=20mA 5 7 - GHz
Insertion Gain iSZIei2 VCE=10V, IC=20mA, f = 1GHz 8.5 11.5 - dB
Noise Figure NF VCE=10V, IC=5rnA, f = 1GHz - 1.1 2 dB
Reverse Transfer Capacitance Cre - 0.55 L05 pF
Q1 VCB=10V, IE=0, f=1MHz
Reverse Transfer Capacitance Cre ( o e) - 0.6 1.1 pF
(Note) ore is measured by 3 terminal method capacitance bridge.
961001EAA1
OTOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid
situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or
damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions
and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
OThe information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third
parties which may result from its use. No license is granted by implication or otherwise under any intellectual
property or other rights of TOSHIBA CORPORATION or others.
OThe information contained herein is subject to change without notice.
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