HN1D04FU ,Switching diodeElectrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) TestCharacteristic Symbol Test Condit ..
HN1J02FU ,Field Effect Transistor Silicon P Channel Mos Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance Low threshold voltage: Vth =−0.5V~−1.5V High speed Sm ..
HN1K02FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsHN1K02FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K02FU High Speed Switching
HN1K03FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsHN1K03FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K03FU High Speed Switching
HN1K04FU ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsHN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switchi ..
HN1K05FU ,Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface ApplicationsApplications High input impedance and extremely low drive current. V is low and it is poss ..
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
HXL1225 ,Sincerity Mocroelectronics - 0.8A 300.380 VOLTAGE SCRS IGT<200uA
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HY1-12V , Non-polarized 1 Form C relay that realizes nominal operating power of 150 mW
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HY17-12 , 90 Degree Hybrid 1.71-1.88 GHz
HN1D04FU
Switching diode
HN1D04FU
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D04FU Ultra High Speed Switching Application Low forward voltage : VF(3) = 0.90V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C) Weight: 6.8 g (typ.)
Unit: mm
